Measurement of unity gain cutoff frequency and saturation velocity of a GaN HEMT transistor
| dc.contributor.author | Oxley, C. H. | en |
| dc.contributor.author | Uren, M. J. | en |
| dc.date.accessioned | 2008-11-24T14:02:22Z | |
| dc.date.available | 2008-11-24T14:02:22Z | |
| dc.date.issued | 2005-02-01 | en |
| dc.description.abstract | The measured intrinsic saturation velocity (vsi) of carriers in a gallium nitride (GaN) high electron mobility transistor (HEMT) is very much lower than that predicted using Monte Carlo simulation. A novel method of extraction of the intrinsic saturation velocity (vsi) of carriers has been developed utilising the deembedded s-parameters, thus enabling the calculation of vsi over a wide range of bias conditions. The method is equally applicable for gallium arsenide (GaAs) and indium phosphide (InP) based transistors. The measurements indicate for GaN-based HEMT a maximum deembedded saturation velocity of 1.1×105 m/s close to the pinchoff voltage (VP). It was found that self-heating had only a weak effect on the saturation velocity up to junction temperatures approaching 140°C above ambient. | |
| dc.identifier.citation | Oxley, C.H. and Uren, M.J. (2005) Measurement of unity gain cutoff frequency and saturation velocity of a GaN HEMT transistor. IEEE Transactions on Electron Devices, 52(2), pp. 165-169. | |
| dc.identifier.doi | https://doi.org/10.1109/TED.2004.842719 | |
| dc.identifier.issn | 0018-9383 | en |
| dc.identifier.uri | http://hdl.handle.net/2086/284 | |
| dc.language.iso | en | en |
| dc.publisher | IEEE | en |
| dc.researchgroup | Centre for Electronic and Communications Engineering | |
| dc.subject | RAE 2008 | |
| dc.subject | UoA 24 Electrical and Electronic Engineering | |
| dc.title | Measurement of unity gain cutoff frequency and saturation velocity of a GaN HEMT transistor | en |
| dc.type | Article | en |