Method for measuring source resistance Rs in saturation region of GaN HEMT device over bias conditions (Vgs,Vds)

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dc.contributor.authorOxley, C. H.en
dc.date.accessioned2013-08-08T14:27:50Z
dc.date.available2013-08-08T14:27:50Z
dc.date.issued2004-03
dc.identifier.citationOxley, C.H. (2004) Method for measuring source resistance Rs in saturation region of GaN HEMT device over bias conditions (Vgs,Vds), Electronics Letters, 40 (5), 4th March 2004, pp 344-346en
dc.identifier.doihttps://doi.org/10.1049/el:20040236
dc.identifier.issn0013-5194
dc.identifier.urihttp://hdl.handle.net/2086/8878
dc.language.isoenen
dc.researchgroupCentre for Electronic and Communications Engineeringen
dc.titleMethod for measuring source resistance Rs in saturation region of GaN HEMT device over bias conditions (Vgs,Vds)en
dc.typeArticleen

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