In0.53Ga0.47As Planar Gunn Diodes Operating at a Fundamental Frequency of 164 GHz

Date

2013

Authors

Khalid, A.
Li, C.
Papageogiou, V.
Dunn, G. M.
Steer, M. J.
Thayne, I. G,
Kuball, M.
Oxley, C. H.
Montes, Miguel
Stephen, A.
Glover, James
Cumming, D. R. S.

Advisors

Journal Title

Journal ISSN

ISSN

DOI

https://doi.org/10.1109/LED.2012.2224841

Volume Title

Publisher

IEEE

Type

Article

Peer reviewed

Yes

Abstract

We present the first results of a planar Gunn diode made in In0.53Ga0.47As on an InP substrate, operating at a fundamental frequency up to 164 GHz. For a 120-μm-wide device with a 1.3-μm active channel length, the highest power achieved was approximately −10 dBm at 164 GHz.

Description

Keywords

Citation

Khalid, A. et al. (2013) In0.53Ga0.47As Planar Gunn Diodes Operating at a Fundamental Frequency of 164 GHz. IEEE Electron Device Letters, 34 (1), pp. 39-41

URI

http://hdl.handle.net/2086/8007

Rights

Research Institute

Collections

School of Engineering and Sustainable Development