Investigation on the Mist intensity to deposit Gallium Oxide thin films by Mist Chemical Vapour Deposition (M‐CVD)

Date
2023-10-29
Authors
Ganguly, Swapnodoot
Manjunatha, Krishna Nama
Paul, Shashi
Journal Title
Journal ISSN
ISSN
1862-6254
1862-6270
Volume Title
Publisher
Wiley
Peer reviewed
Yes
Abstract
This study demonstrates a novel, simple and robust Mist‐CVD (M‐CVD) compatible with existing industrial practices to deposit gallium oxide thin films and influence of mist intensity on the properties of gallium oxide. The intensity of the mist generation has been optimized to obtain smooth and uniform thin films. The thin film deposited in this work is mixed phase polycrystalline gallium oxide. UV‐Vis NIR spectroscopy and photo response of thin film unveils that gallium oxide thin film is responsive to ultra‐violet wavelengths including deep UVC and UVB bands and the mist generation intensity has negligible influence on the bandgap of the thin film. Thickness of thin film can be altered by varying the mist intensity. It has been observed that there is no appreciable impact on refractive index of varying mist intensity. Morphological studies prove the formation of ultra‐smooth thin film with rms value of 0.628nm; which is closer and/or better than conventional semiconductor thin film deposition processes used for depositing Ga
Description
open access article
Keywords
M-CVD, Mist Chemical Vapour Depositioin, Ga2O3, Ulta-wide bandgap materials
Citation
Ganguly, S., Manjunatha, K.N. and Paul, S. (2023) Investigation on the Mist intensity to deposit Gallium Oxide thin films by Mist Chemical Vapour Deposition (M‐CVD). physica status solidi (RRL) – Rapid Research Letters,
Research Institute
Institute of Engineering Sciences (IES)