Investigation on the Mist intensity to deposit Gallium Oxide thin films by Mist Chemical Vapour Deposition (M‐CVD)

This study demonstrates a novel, simple and robust Mist‐CVD (M‐CVD) compatible with existing industrial practices to deposit gallium oxide thin films and influence of mist intensity on the properties of gallium oxide. The intensity of the mist generation has been optimized to obtain smooth and uniform thin films. The thin film deposited in this work is mixed phase polycrystalline gallium oxide. UV‐Vis NIR spectroscopy and photo response of thin film unveils that gallium oxide thin film is responsive to ultra‐violet wavelengths including deep UVC and UVB bands and the mist generation intensity has negligible influence on the bandgap of the thin film. Thickness of thin film can be altered by varying the mist intensity. It has been observed that there is no appreciable impact on refractive index of varying mist intensity. Morphological studies prove the formation of ultra‐smooth thin film with rms value of 0.628nm; which is closer and/or better than conventional semiconductor thin film deposition processes used for depositing Ga