A first evaluation of thick oxide 3C-SiC MOS capacitors reliability

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dc.cclicenceCC-BY-NC-NDen
dc.contributor.authorLi, Fan
dc.contributor.authorSong, Qiu
dc.contributor.authorPerez-Tomas, Amador
dc.contributor.authorShah, Vishal
dc.contributor.authorSharma, Yogesh
dc.contributor.authorHamilton, Dean P.
dc.contributor.authorFisher, Craig
dc.contributor.authorGammon, Peter
dc.contributor.authorJennings, Mike
dc.contributor.authorMawby, Phil
dc.date.acceptance2019-11-18
dc.date.accessioned2019-12-16T11:39:33Z
dc.date.available2019-12-16T11:39:33Z
dc.date.issued2019-11-18
dc.descriptionThe file attached to this record is the author's final peer reviewed version. The Publisher's final version can be found by following the DOI link.en
dc.description.abstractDespite the recent advances in 3C-SiC technology, there is a lack of statistical analysis on the reliability of SiO2 layers on 3C-SiC, which is crucial in power MOS device developments. This paper presents a comprehensive study of the medium and long-term time-dependent dielectric breakdown (TDDB) of 65 nm thick SiO2 layers thermally grown on a state-of-the-art 3C-SiC/Si wafer. Fowler-Nordheim (F-N) tunnelling is observed above 7 MV/cm and an effective barrier height of 3.7 eV is obtained, which is highest known for native SiO2 layers grown on the semiconductor substrate. The observed dependence of the oxide reliability on the gate active area suggests the oxide quality has not reached the intrinsic level. Three failure mechanisms were identified, confirmed by both medium and long-term results. Whereas two of them are likely due to extrinsic defects from material quality and fabrication steps, the one dominating the high field (>8.5 MV/cm) should be attributed to the electron impact ionization within SiO2. At room temperature, the field acceleration factor is found to be ≈0.906 dec/ (MV/cm) for high fields, and the projected life-time exceeds 10 years at 4.5 MV/cm.en
dc.funderNo external funderen
dc.identifier.citationLi, F. et al. (2019) A first evaluation of thick oxide 3C-SiC MOS capacitors reliability.en
dc.identifier.doihttps://doi.org/10.1109/ted.2019.2954911
dc.identifier.urihttps://dora.dmu.ac.uk/handle/2086/18955
dc.language.isoenen
dc.peerreviewedYesen
dc.publisherIEEEen
dc.researchinstituteInstitute of Engineering Sciences (IES)en
dc.titleA first evaluation of thick oxide 3C-SiC MOS capacitors reliabilityen
dc.typeArticleen

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