Coexistence of memory resistance and memory capacitance in TiO2 solid state devices

Abstract

This work exploits the coexistence of both resistance and capacitance memory effects in TiO2-based two-terminal cells. Our Pt/TiO2/TiOx/Pt devices exhibit an interesting combination of hysteresis and non-zero crossing in their current-voltage (I-V) characteristic that indicates the presence of capacitive states. Our experimental results demonstrate that both resistance and capacitance states can be simultaneously set via either voltage cycling and/or voltage pulses. We argue that these state modulations occur due to bias-induced reduction of the TiOx active layer via the displacement of ionic species.

Description

Keywords

ReRAM, Memristor, Memcapacitor, TiO2, Nanoscale

Citation

Salaoru, I., Li, Q., Khiat, A. and Prodromakis, T. (2014) Coexistence of memory resistance and memory capacitance in TiO2 solid state devices. Nanoscale Research Letters, 9, pp. 552

Rights

Research Institute

Institute of Engineering Sciences (IES)