Low-inductive compact SiC power modules for high-frequency operation

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dc.cclicenceCC-BY-NCen
dc.contributor.authorMeisser, M.
dc.contributor.authorHamilton, Dean P.
dc.contributor.authorBlank, T.
dc.contributor.authorMawby, P.A.
dc.date.accessioned2019-06-18T12:10:36Z
dc.date.available2019-06-18T12:10:36Z
dc.date.issued2014-06-24
dc.description.abstractThis paper encompasses the design, manufacture and electrical characterisation of full-SiC half-bridge modules suited for high-frequency operation. The modules consist of stacked AlN DCB substrates equipped with SiC MOSFETs and SiC JFETs. The parasitic inductances of the modules were minimised by the use of a press contact system instead of contact leads. The low parasitic inductances of the modules were verified by simulation and impedance spectroscopy. Modules with different configurations are compared regarding their current- and temperature-dependent static losses by means of a temperature-controlled test rig. The measured low on-resistance of the individual switches proves the high performance of the modules predicted by thermal simulations.en
dc.exception.ref2021codes254aen
dc.funderOther external funder (please detail below)en
dc.identifier.citationMeisser, M., Hamilton, D.P., Blank, T., Mawby, P.A. (2014) Low-inductive compact SiC power modules for high-frequency operation. PCIM Europe 2014; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany, May 2014.en
dc.identifier.isbn9783800736034
dc.identifier.urihttps://www.dora.dmu.ac.uk/handle/2086/18060
dc.language.isoenen
dc.publisherVDEen
dc.titleLow-inductive compact SiC power modules for high-frequency operationen
dc.typeConferenceen

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