Low-inductive compact SiC power modules for high-frequency operation

This paper encompasses the design, manufacture and electrical characterisation of full-SiC half-bridge modules suited for high-frequency operation. The modules consist of stacked AlN DCB substrates equipped with SiC MOSFETs and SiC JFETs. The parasitic inductances of the modules were minimised by the use of a press contact system instead of contact leads. The low parasitic inductances of the modules were verified by simulation and impedance spectroscopy. Modules with different configurations are compared regarding their current- and temperature-dependent static losses by means of a temperature-controlled test rig. The measured low on-resistance of the individual switches proves the high performance of the modules predicted by thermal simulations.