Origin of Stochastic Resistive Switching in Devices with Phenomenologically

dc.cclicenceN/Aen
dc.contributor.authorLi, Qingjiangen
dc.contributor.authorKhiat, Alien
dc.contributor.authorSalaoru, Iuliaen
dc.contributor.authorXu, H.en
dc.contributor.authorProdromakis, Themistoklisen
dc.date.accessioned2016-07-15T10:05:21Z
dc.date.available2016-07-15T10:05:21Z
dc.date.issued2014
dc.description.abstractNanoscale resistive switching devices are nowadays widely employed in applications of storage, logic and computing. The switching mechanism of metal oxide based devices is normally assumed to be the filamentary formation and rupture within the devices’ active cores but the origin of filaments growth is still controversial. Previous research has already demonstrated that initial filamentary states could significantly affect the devices’ switching dynamics and final resistance distributions. Here we demonstrate the relation between pristine resistive states and distribution of filaments via modeling the switching dynamics by utilizing a current percolation circuit. We show that devices with identical initial resistive states could attain distinct plausible filamentary distributions and correspondingly manifest very dissimilar switching dynamics even when biased with similar stimuli.en
dc.funderEPSRC (Engineering and Physical Sciences Research Council)en
dc.funderCHIST-ERA ERA-Neten
dc.funderNational Nature Science Foundationen
dc.identifier.citationLi, Q. et al. (2014) Origin of Stochastic Resistive Switching in Devices with Phenomenologically. 2014 IEEE International Symposium on Circuits and Systems (ISCAS), pp. 1428 - 1431en
dc.identifier.doihttps://doi.org/10.1109/ISCAS.2014.6865413
dc.identifier.issn0271-4302
dc.identifier.urihttp://hdl.handle.net/2086/12310
dc.language.isoenen
dc.projectidNSFC 61171017en
dc.publisherIEEEen
dc.researchinstituteInstitute of Engineering Sciences (IES)en
dc.subjectresistive switchingen
dc.subjectmemristoren
dc.subjectpercolationen
dc.titleOrigin of Stochastic Resistive Switching in Devices with Phenomenologicallyen
dc.typeConferenceen

Files

Original bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
IEEE Origin of stochastic resistive switching in devices with phenomenologically identical initial states.pdf
Size:
638.19 KB
Format:
Adobe Portable Document Format
License bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
4.2 KB
Format:
Item-specific license agreed upon to submission
Description: