Investigation of the switching mechanism in TiO2-based RRAM: a two-dimensional EDX approach

Abstract

The next generation of non-volatile memory storage may well be based on resistive switching in metal oxides. TiO2 as transition metal oxide has been widely used as active layer for the fabrication of a variety of multi-state memory nanostructure devices. However, progress in their technological development has been inhibited by the lack of a thorough understanding of the underlying switching mechanisms. Here, we employed high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) combined with two-dimensional energy dispersive X-ray spectroscopy (2D EDX) to provide a novel, nanoscale view of the mechanisms involved. Our results suggest that the switching mechanism involves redistribution of both Ti and O ions within the active layer combined with an overall loss of oxygen that effectively render conductive filaments. Our study shows evidence of titanium movement in a 10 nm TiO2 thin-film through direct EDX mapping that provides a viable starting point for the improvement of the robustness and life time of TiO2-based resistive random access memory (RRAM).

Description

The file attached to this record is the author's final peer reviewed version. The Publisher's final version can be found by following the DOI link.

Keywords

resistive memory, titanium dioxide, memristors, energy dispersive X-ray spectroscopy, thin films, resistive switching

Citation

Carta, D. et al. (2016) Investigation of the Switching Mechanism in TiO2‑Based RRAM: A Two-dimensional EDX approach. Applied Materials and Interfaces, 8 (30), pp. 19605-19611

Rights

Research Institute

Institute of Engineering Sciences (IES)