Highly integrated power modules based on copper thick-film-on-DCB for high frequency operation of SiC semiconductors—Design and manufacture
dc.cclicence | CC-BY-NC | en |
dc.contributor.author | Schmenger, M. | |
dc.contributor.author | Meisser, M. | |
dc.contributor.author | Hamilton, Dean P. | |
dc.contributor.author | Leyrer, B. | |
dc.contributor.author | Bernd, M. | |
dc.contributor.author | Mawby, P.A. | |
dc.contributor.author | Blank, T. | |
dc.date.accessioned | 2019-06-18T11:50:17Z | |
dc.date.available | 2019-06-18T11:50:17Z | |
dc.date.issued | 2015-10-29 | |
dc.description | The Publisher's final version can be found by following the DOI link. | en |
dc.description.abstract | This paper encompasses the design and the manufacture of a full-SiC module based on copper thick-film. Both DC-link capacitors as well as gate drives are implemented onto the substrate in order to minimise parasitic inductances. Thus, the module is especially suitable for high-frequency operation such as inductive energy transfer and inverter systems for renewable energies and electrical vehicles. In order to maintain high mechanical strength of the module's substrate, a Direct Copper Bond (DCB) provides the basis for multiple thick-film layers. The used thick-film dielectric insulates the gate-drive islands and also works as solder-stop material. The heat-spreading capabilities of DCB substrates are investigated by simulations. | en |
dc.exception.ref2021codes | 254a | en |
dc.funder | Other external funder (please detail below) | en |
dc.identifier.citation | Schmenger, M., Meisser, M., Hamilton, D.P., Leyrer, B., Bernd, M., Mawby, P.A., Blank, T. (2015) Highly integrated power modules based on copper thick-film-on-DCB for high frequency operation of SiC semiconductors—Design and manufacture. 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe), Geneva, Switzerland, Sept 2015. | en |
dc.identifier.doi | https://doi.org/10.1109/epe.2015.7309050 | |
dc.identifier.isbn | 9789075815221 | |
dc.identifier.uri | https://www.dora.dmu.ac.uk/handle/2086/18058 | |
dc.language.iso | en | en |
dc.publisher | IEEE | en |
dc.title | Highly integrated power modules based on copper thick-film-on-DCB for high frequency operation of SiC semiconductors—Design and manufacture | en |
dc.type | Conference | en |
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