Highly integrated power modules based on copper thick-film-on-DCB for high frequency operation of SiC semiconductors—Design and manufacture

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dc.cclicenceCC-BY-NCen
dc.contributor.authorSchmenger, M.
dc.contributor.authorMeisser, M.
dc.contributor.authorHamilton, Dean P.
dc.contributor.authorLeyrer, B.
dc.contributor.authorBernd, M.
dc.contributor.authorMawby, P.A.
dc.contributor.authorBlank, T.
dc.date.accessioned2019-06-18T11:50:17Z
dc.date.available2019-06-18T11:50:17Z
dc.date.issued2015-10-29
dc.descriptionThe Publisher's final version can be found by following the DOI link.en
dc.description.abstractThis paper encompasses the design and the manufacture of a full-SiC module based on copper thick-film. Both DC-link capacitors as well as gate drives are implemented onto the substrate in order to minimise parasitic inductances. Thus, the module is especially suitable for high-frequency operation such as inductive energy transfer and inverter systems for renewable energies and electrical vehicles. In order to maintain high mechanical strength of the module's substrate, a Direct Copper Bond (DCB) provides the basis for multiple thick-film layers. The used thick-film dielectric insulates the gate-drive islands and also works as solder-stop material. The heat-spreading capabilities of DCB substrates are investigated by simulations.en
dc.exception.ref2021codes254aen
dc.funderOther external funder (please detail below)en
dc.identifier.citationSchmenger, M., Meisser, M., Hamilton, D.P., Leyrer, B., Bernd, M., Mawby, P.A., Blank, T. (2015) Highly integrated power modules based on copper thick-film-on-DCB for high frequency operation of SiC semiconductors—Design and manufacture. 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe), Geneva, Switzerland, Sept 2015.en
dc.identifier.doihttps://doi.org/10.1109/epe.2015.7309050
dc.identifier.isbn9789075815221
dc.identifier.urihttps://www.dora.dmu.ac.uk/handle/2086/18058
dc.language.isoenen
dc.publisherIEEEen
dc.titleHighly integrated power modules based on copper thick-film-on-DCB for high frequency operation of SiC semiconductors—Design and manufactureen
dc.typeConferenceen

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