Rare-earth substituted HfO2 thin films grown by metalorganic chemical vapor deposition.

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dc.contributor.authorDevi, Anjana
dc.contributor.authorCwik, Stefan
dc.contributor.authorXu, Ke
dc.contributor.authorMilanov, Andrian P.
dc.contributor.authorNoei, Heshmat
dc.contributor.authorWang, Yuemin
dc.contributor.authorBarreca, Davide
dc.contributor.authorMeijerd, Jan
dc.contributor.authorRogallad, Detlef
dc.contributor.authorKahn, Divine
dc.contributor.authorCross, R. B. M.
dc.contributor.authorParala, Harish
dc.contributor.authorPaul, Shashi
dc.date.accessioned2012-01-03T10:24:59Z
dc.date.available2012-01-03T10:24:59Z
dc.date.issued2011-10-29
dc.description.abstractThin films of HfGdOx and HfDyOx were deposited by metalorganic chemical vapor deposition (MOCVD) utilizing guanidinate precursors for Hf, Gd and Dy. The close match in the thermal properties of the precursors enabled the MOCVD of rare-earth (RE) substituted HfO2 over a wide temperature window. Film deposition was carried out in the temperature range 300–700 °C in the presence of oxygen on Si(100) substrates. HfGdOx films were analyzed in detail for their structure, composition and morphology using X-ray diffraction, Rutherford backscattering spectrometry, proton induced X-ray emission, X-ray photoelectron spectroscopy and scanning electron microscopy. The electrical properties of HfGdOx in terms of capacitance–voltage and current–voltage characteristics of metal-insulator-semiconductor device structures were evaluated.en
dc.identifier.citationDevi, A. et al. (2011) Rare-earth substituted HfO2 thin films grown by metalorganic chemical vapor deposition. Thin Solid Films, 520 (14), pp. 4512-4517en
dc.identifier.doihttps://doi.org/10.1016/j.tsf.2011.10.141
dc.identifier.urihttp://hdl.handle.net/2086/5478
dc.language.isoenen
dc.peerreviewedYesen
dc.publisherElsevieren
dc.ref2014.selected1366964034_0410680122613_15_3
dc.researchgroupEmerging Technologies Research Centreen
dc.researchinstituteInstitute of Engineering Sciences (IES)en
dc.subjectMOCVDen
dc.subjectRE-substituted HfO2en
dc.subjectcompositionen
dc.subjectmorphologyen
dc.subjectelectrical characteristicsen
dc.titleRare-earth substituted HfO2 thin films grown by metalorganic chemical vapor deposition.en
dc.typeArticleen

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