Comparative Study of Silicon Nanowires Grown From Ga, In, Sn, and Bi for Energy Harvesting

Simple item page
dc.cclicenceCC-BY-NCen
dc.contributor.authorManjunatha, Krishna Nama
dc.contributor.authorSalaoru, Iulia
dc.contributor.authorMilne, W.I
dc.contributor.authorPaul, Shashi
dc.date.acceptance2020-07-25
dc.date.accessioned2020-09-07T13:00:06Z
dc.date.available2020-09-07T13:00:06Z
dc.date.issued2020-08-14
dc.descriptionThe file attached to this record is the author's final peer reviewed version. The Publisher's final version can be found by following the DOI link.en
dc.description.abstractA high density of silicon nanowires for solar cell applications was fabricated on a single crystalline silicon wafer, using low eutectic temperature metal catalysts, namely, gallium, indium, tin, and bismuth. The use of silicon nanowires is exploited for light trapping with an aim to enhance the efficiency of solar cells. Additionally, we have optimized the deposition parameters so that there is merely deposition of amorphous silicon along with the growth of silicon nanowires. Thus, it may improve the stability of silicon-based solar cells. The different catalysts used are extensively discussed with experimental results indicating stable growth and highly efficient silicon nanowires for photovoltaic applications. To test the stability, we measured the open-circuit voltage for four hours and the change in voltage was ±0.05 V. The fabrication of all-crystalline silicon solar cells was demonstrated using the conventional mature industrial manufacturing process that is presently used for the amorphous silicon solar cells. To summarize, this research compares various post-transition metals as a catalyst for the growth of nanowires discussing their properties, and such silicon nanowires can be utilized in several other applications not only limited to photovoltaic research.en
dc.funderEPSRC (Engineering and Physical Sciences Research Council)en
dc.identifier.citationManjunathan, K. N., Salaoru, I., Milne, W.I. and Pauls, S. (2020) Comparative Study of Silicon Nanowires Grown From Ga, In, Sn, and Bi for Energy Harvesting. IEEE Journal of Photovoltaics,en
dc.identifier.doihttps://doi.org/10.1109/jphotov.2020.3012628
dc.identifier.issn2156-3403
dc.identifier.urihttps://dora.dmu.ac.uk/handle/2086/20144
dc.peerreviewedYesen
dc.projectid#EP/P020518/1en
dc.publisherIEEEen
dc.researchinstituteInstitute of Engineering Sciences (IES)en
dc.subjectwafer-wire junctionen
dc.subjectSolar Cellen
dc.subjecteutectic temperatureen
dc.subjectplasma enhanced chemical vapor deposition (PECVD)en
dc.subjectsilicon nanowires (SiNWs)en
dc.subjectCatalysten
dc.subjectPhotovoltaic Solar Cellsen
dc.subjectEmerging Solar Cellsen
dc.subjectNanowiresen
dc.subjectSolar Energy Harvestingen
dc.titleComparative Study of Silicon Nanowires Grown From Ga, In, Sn, and Bi for Energy Harvestingen
dc.typeArticleen

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
IEEE-JPhoto -accepted Version.pdf
Size:
787.98 KB
Format:
Adobe Portable Document Format
Description:
Main article
Download
License bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
4.2 KB
Format:
Item-specific license agreed upon to submission
Description:
Download

Collections

School of Engineering and Sustainable Development