Correlated Resistive/Capacitive State Variability in Solid TiO2 based Memory Devices
dc.cclicence | CC-BY-NC | en |
dc.contributor.author | Li., Qingjiang | en |
dc.contributor.author | Salaoru, Iulia | en |
dc.contributor.author | Ali, Khiat | en |
dc.contributor.author | Prodromakis, Themistoklis | en |
dc.contributor.author | Hui, Xu | en |
dc.date.acceptance | 2017-02-12 | en |
dc.date.accessioned | 2018-04-18T09:44:24Z | |
dc.date.available | 2018-04-18T09:44:24Z | |
dc.date.issued | 2017-04-25 | |
dc.description.abstract | In this work, we experimentally demonstrated the correlated resistive/capacitive switching and state variability in practical TiO2 based memory devices. Based on filamentary functional mechanism, we argue that the impedance state variability stems from the randomly distributed defects inside the oxide bulk. Finally, our assumption was verified via a current percolation circuit model, by taking into account of random defects distribution and coexistence of memristor and memcapacitor. | en |
dc.exception.ref2021codes | 254a | en |
dc.funder | EPSRC (EP/K017829/1) | en |
dc.funder | National Nature Science Foudation (61604177, 61471377) | en |
dc.funder | NUDT Science Support Program (JC-15-04-02) | en |
dc.identifier.citation | Li, Q., Salaoru, I., Khiat, A., Hui, X. and Prodromakis, T. (2017) Correlated Resistive/Capacitive State Variability in Solid TiO2 based Memory Devices. Applied Physics A, 123:372. | en |
dc.identifier.doi | https://doi.org/10.1007/s00339-017-0991-5 | |
dc.identifier.issn | 1432-0630 | |
dc.identifier.uri | http://hdl.handle.net/2086/16067 | |
dc.language.iso | en | en |
dc.peerreviewed | Yes | en |
dc.projectid | EP/K017829/1 | en |
dc.projectid | 61604177, 61471377 | en |
dc.projectid | JC-15-04-02 | en |
dc.publisher | Springer | en |
dc.researchinstitute | Institute of Engineering Sciences (IES) | en |
dc.subject | TiO2 | en |
dc.subject | Bottom Electrode | en |
dc.subject | Resistive Switching Active Core | en |
dc.subject | High Resistive State | en |
dc.title | Correlated Resistive/Capacitive State Variability in Solid TiO2 based Memory Devices | en |
dc.type | Article | en |