Correlated Resistive/Capacitive State Variability in Solid TiO2 based Memory Devices

Date

2017-04-25

Advisors

Journal Title

Journal ISSN

ISSN

1432-0630

Volume Title

Publisher

Springer

Type

Article

Peer reviewed

Yes

Abstract

In this work, we experimentally demonstrated the correlated resistive/capacitive switching and state variability in practical TiO2 based memory devices. Based on filamentary functional mechanism, we argue that the impedance state variability stems from the randomly distributed defects inside the oxide bulk. Finally, our assumption was verified via a current percolation circuit model, by taking into account of random defects distribution and coexistence of memristor and memcapacitor.

Description

Keywords

TiO2, Bottom Electrode, Resistive Switching Active Core, High Resistive State

Citation

Li, Q., Salaoru, I., Khiat, A., Hui, X. and Prodromakis, T. (2017) Correlated Resistive/Capacitive State Variability in Solid TiO2 based Memory Devices. Applied Physics A, 123:372.

Rights

Research Institute

Institute of Engineering Sciences (IES)