Floating body induced transient characteristics in polycrystalline silicon TFTs

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dc.contributor.authorXu, Y. Z.en
dc.contributor.authorClough, F. J.en
dc.contributor.authorNarayanan, E. M. Sankaraen
dc.contributor.authorCross, R. B. M.en
dc.date.accessioned2013-10-29T16:06:11Z
dc.date.available2013-10-29T16:06:11Z
dc.date.issued2000
dc.funderDMUen
dc.identifier.citationXu, Y.Z., Clough, F.J., Narayanan, E.M.S. and Cross, R. (2000). Floating body induced transient characteristics in polycrystalline silicon TFTs. Materials Research Society Symposium - Proceedings. 609, A2841-A2846.en
dc.identifier.urihttp://hdl.handle.net/2086/9278
dc.language.isoenen
dc.peerreviewedYesen
dc.projectidLoe temperature poly-Si TFTsen
dc.publisherMaterials Research Societyen
dc.researchgroupEmerging Technologies Research Centreen
dc.researchinstituteInstitute of Engineering Sciences (IES)en
dc.titleFloating body induced transient characteristics in polycrystalline silicon TFTsen
dc.typeConferenceen

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