Non‐Zero and Open‐Loop Current–Voltage Characteristics in Electronic Memory Devices

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dc.cclicenceCC BYen
dc.contributor.authorPaul, Febin
dc.contributor.authorNama Manjunatha, Krishna
dc.contributor.authorPaul, Shashi
dc.date.acceptance2023-07-17
dc.date.accessioned2023-08-14T10:36:35Z
dc.date.available2023-08-14T10:36:35Z
dc.date.issued2023-08-09
dc.descriptionopen access articleen
dc.description.abstractThis work focuses on the non-zero-crossing and open-loop current–voltage (I–V) characteristics of electronic memory devices that are studied and focused on primarily for non-volatile memory storage applications. Gold nanoparticles-based devices are fabricated to understand possible non-crossing zero and open-loop current–voltage behavior, where a non-zero current and open loop I–V characteristics are observed at zero voltage. While other studies have attributed this behavior as a “battery effect”, this study presents an alternate perspective for non-redox-based charge storage memory devices. The electrical measurements clearly demonstrate that the non-zero current and open-loop characteristics are due to the charge trapping of the gold nanoparticles. The charge accumulation within the nanoparticle is observed to create a non-zero potential within the device and thereby encouraging such behavior, even though the applied external voltage is zero. The longstanding mystery in deciphering if electrical measurements or the charge storage device contributes toward non-zero property is unfurled in this article. A possible charge storage model is proposed and further verified using liquid crystals-based two terminal devices. The presence of internal potential leads to an offset within the devices, a non-zero current and open-loop I–V even when the external applied voltage is zero.en
dc.funderEPSRC (Engineering and Physical Sciences Research Council)en
dc.identifier.citationPaul, F., Nama Manjunatha, K. and Paul, S. (2023) Non‐Zero and Open‐Loop Current–Voltage Characteristics in Electronic Memory Devices. Advanced Electronic Materials,en
dc.identifier.doihttps://doi.org/10.1002/aelm.202300324
dc.identifier.urihttps://hdl.handle.net/2086/23152
dc.peerreviewedYesen
dc.projectidEPSRC grant #EP/E047785/1en
dc.publisherWileyen
dc.researchinstituteInstitute of Engineering Sciences (IES)en
dc.subjectliquid crystal memoryen
dc.subjectmemristorsen
dc.subjectnon-zero crossingen
dc.subjectnon-zero I–V characteristicsen
dc.subjectopen-loop electrical behaviorsen
dc.subjecttwo terminal memoryen
dc.subjectneuromorphic memoryen
dc.titleNon‐Zero and Open‐Loop Current–Voltage Characteristics in Electronic Memory Devicesen
dc.typeArticleen

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