Nanostructures of ZnO as elements in inorganic/organic hybrid electrically writable memory devices.

Date

2008

Advisors

Journal Title

Journal ISSN

ISSN

Volume Title

Publisher

Type

Conference

Peer reviewed

Yes

Abstract

In this work, we propose a hybrid inorganic/organic memory device that is fabricated using simple techniques at a temperature compatible with large area plastic substrate materials. The devices are a combination of the organic polymers polystyrene and polyvinyl acetate and nanorods of zinc oxide (ZnO), grown via a hydrothermal process which uses nanoparticles of ZnO as growth precursors. Current-voltage (I-V) and capacitance-voltage (C-V) measurements of devices incorporating ZnO nanorods show significant hysteresis in the characteristics. This is in direct contrast to the all-organic devices, where the leakage current was determined to be less than 1pA, and where no hysteresis was evident is either the I-V or C-V investigations. It is postulated that the addition of ZnO nanorods to the structure increases the overall conductivity of the device and ZnO nanorods act as a charge storage medium in the polymer matrix, which leads to the charging/discharging behaviour demonstrated in the electrical measurements.

Description

Keywords

memory devices, zinc oxide

Citation

Cross, R. B. M. Paul, S. and Salaoru, I. (2008) Nanostructures of ZnO as elements in inorganic/organic hybrid electrically writable memory devices. Materials Research Society Symposium Proceedings, 1114, pp. G12

Rights

Research Institute

Institute of Engineering Sciences (IES)