DCB-based low-inductive SiC modules for high frequency operation

The work at hand encompasses the design, manufacture and electrical characterisation of full-SiC modules optimised for high frequency operation. The parasitic inductances of the module were minimised by abandonment of contact leads while the use of AlN DCB substrates ensures an excellent heat transfer to the heat-sink. The low parasitic inductances of the modules were verified by impedance spectroscopy. Modules were equipped with SiC MOSFETs and SiC JFETs. Both were compared regarding their static losses and switching behaviour by means of temperature-controlled test rigs. Key parameters as voltage rise and fall times, switching losses and on-resistances were measured. The MOSFET-equipped modules offer fast switching with 50 kV/µs at 20 A, 800 V.