Device quality SiO2 films by liquid phase deposition (LPD) at 48°C
dc.contributor.author | Manhas, M. | en |
dc.contributor.author | Pease, T. J. | en |
dc.contributor.author | Cross, R. B. M. | en |
dc.contributor.author | Bose, S. C. | en |
dc.contributor.author | Oxley, D. P. | en |
dc.contributor.author | De Souza, M. M. | en |
dc.contributor.author | Sankara Narayanan, E. M. | en |
dc.date.accessioned | 2013-10-24T13:14:30Z | |
dc.date.available | 2013-10-24T13:14:30Z | |
dc.date.issued | 2002 | |
dc.funder | DMU | en |
dc.identifier.citation | Manhas, M. et al. (2002) Device quality SiO2 films by liquid phase deposition (LPD) at 48°C. Materials Research Society Symposium - Proceedings. 716, pp. 317-323. | en |
dc.identifier.doi | https://doi.org/10.1557/PROC-716-B7.9 | |
dc.identifier.uri | http://hdl.handle.net/2086/9246 | |
dc.language.iso | en | en |
dc.peerreviewed | Yes | en |
dc.projectid | Low temperature growth of dielectrics | en |
dc.researchgroup | Emerging Technologies Research Centre | en |
dc.researchinstitute | Institute of Engineering Sciences (IES) | en |
dc.title | Device quality SiO2 films by liquid phase deposition (LPD) at 48°C | en |
dc.type | Conference | en |
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