Device quality SiO2 films by liquid phase deposition (LPD) at 48°C

dc.contributor.authorManhas, M.en
dc.contributor.authorPease, T. J.en
dc.contributor.authorCross, R. B. M.en
dc.contributor.authorBose, S. C.en
dc.contributor.authorOxley, D. P.en
dc.contributor.authorDe Souza, M. M.en
dc.contributor.authorSankara Narayanan, E. M.en
dc.date.accessioned2013-10-24T13:14:30Z
dc.date.available2013-10-24T13:14:30Z
dc.date.issued2002
dc.funderDMUen
dc.identifier.citationManhas, M. et al. (2002) Device quality SiO2 films by liquid phase deposition (LPD) at 48°C. Materials Research Society Symposium - Proceedings. 716, pp. 317-323.en
dc.identifier.doihttps://doi.org/10.1557/PROC-716-B7.9
dc.identifier.urihttp://hdl.handle.net/2086/9246
dc.language.isoenen
dc.peerreviewedYesen
dc.projectidLow temperature growth of dielectricsen
dc.researchgroupEmerging Technologies Research Centreen
dc.researchinstituteInstitute of Engineering Sciences (IES)en
dc.titleDevice quality SiO2 films by liquid phase deposition (LPD) at 48°Cen
dc.typeConferenceen

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