Device quality SiO2 films by liquid phase deposition (LPD) at 48°C

Abstract

Description

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Citation

Manhas, M. et al. (2002) Device quality SiO2 films by liquid phase deposition (LPD) at 48°C. Materials Research Society Symposium - Proceedings. 716, pp. 317-323.

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Research Institute

Institute of Engineering Sciences (IES)