Growth of low temperature silicon nano-structures for electronic and electrical energy generation applications

Date

2013-02-15

Advisors

Journal Title

Journal ISSN

ISSN

Volume Title

Publisher

Springer

Type

Article

Peer reviewed

Yes

Abstract

This paper represents the lowest growth temperature for silicon nano-wires (SiNWs) via a vapour-liquid--solid method, which has ever been reported in the literature. The nano-wires were grown using plasma-enhanced chemical vapour deposition technique at temperatures as low as 150[degree sign]C using gallium as the catalyst. This study investigates the structure and the size of the grown silicon nano-structure as functions of growth temperature and catalyst layer thickness. Moreover, the choice of the growth temperature determines the thickness of the catalyst layer to be used.The electrical and optical characteristics of the nano-wires were tested by incorporating them in photovoltaic solar cells, two terminal bistable memory devices and Schottky diode. With further optimisation of the growth parameters, SiNWs, grown by our method, have promising future for incorporation into high performance electronic and optical devices.

Description

Keywords

Silicon nano-wire, Nano-tree, Gallium, PECVD, Solar cell, Schottky diode, Bistable memory

Citation

Gabrielyan, N. et al. (2013) Growth of low temperature silicon nano-structures for electronic and electrical energy generation applications. Nanoscale Research Letters, 8, pp. 83

Rights

Research Institute

Institute of Engineering Sciences (IES)