High-Temperature (1200–1400°C) Dry Oxidation of 3C-SiC on Silicon

Simple item page
dc.cclicenceCC-BY-NCen
dc.contributor.authorSharma, Y.K.
dc.contributor.authorLi, F.
dc.contributor.authorJennings, M.R.
dc.contributor.authorFisher, C.A.
dc.contributor.authorPerez-Tomas, A.
dc.contributor.authorThomas, S.
dc.contributor.authorHamilton, Dean P.
dc.contributor.authorRussell, S.A.O.
dc.contributor.authorMawby, P.A.
dc.date.acceptance2015-07-21
dc.date.accessioned2019-12-05T09:37:04Z
dc.date.available2019-12-05T09:37:04Z
dc.date.issued2015-08-07
dc.description.abstractIn a novel approach, high temperatures (1200–1400°C) were used to oxidize cubic silicon carbide (3C-SiC) grown on silicon substrate. High-temperature oxidation does not significantly affect 3C-SiC doping concentration, 3C-SiC structural composition, or the final morphology of the SiO2 layer, which remains unaffected even at 1400°C (the melting point of silicon is 1414°C). Metal-oxide-semiconductor capacitors (MOS-C) and lateral channel metal-oxide-semiconductor field-effect-transistors (MOSFET) were fabricated by use of the high-temperature oxidation process to study 3C-SiC/SiO2 interfaces. Unlike 4H-SiC MOSFET, there is no extra benefit of increasing the oxidation temperature from 1200°C to 1400°C. All the MOSFET resulted in a maximum field-effect mobility of approximately 70 cm2/V s.en
dc.funderNo external funderen
dc.identifier.citationSharma, Y. K. , Li, F. , Jennings, M. R. , Fisher, C. A. , Pérez-Tomás, A. , Thomas, S. , Hamilton, D. P. , Russell, S. A. O. , Mawby, P. A. (2015) High-Temperature (1200–1400°C) Dry Oxidation of 3C-SiC on Silicon . Journal of Electronic Materials , 44(11), pp.4167-4174.en
dc.identifier.doihttps://doi.org/10.1007/s11664-015-3949-4
dc.identifier.issn0361-5235
dc.identifier.issn1543-186X
dc.identifier.urihttps://dora.dmu.ac.uk/handle/2086/18913
dc.language.isoenen
dc.peerreviewedYesen
dc.publisherSpringeren
dc.researchinstituteInstitute of Engineering Sciences (IES)en
dc.subject3C-SiCen
dc.subjectSilicon Carbideen
dc.subjectMOSFETen
dc.subjecthigh temperatureen
dc.subjectthermal oxidationen
dc.titleHigh-Temperature (1200–1400°C) Dry Oxidation of 3C-SiC on Siliconen
dc.typeArticleen

Files

License bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
4.2 KB
Format:
Item-specific license agreed upon to submission
Description:
Download

Collections

School of Engineering and Sustainable Development