High-Temperature (1200–1400°C) Dry Oxidation of 3C-SiC on Silicon

Date

2015-08-07

Advisors

Journal Title

Journal ISSN

ISSN

0361-5235
1543-186X

Volume Title

Publisher

Springer

Type

Article

Peer reviewed

Yes

Abstract

In a novel approach, high temperatures (1200–1400°C) were used to oxidize cubic silicon carbide (3C-SiC) grown on silicon substrate. High-temperature oxidation does not significantly affect 3C-SiC doping concentration, 3C-SiC structural composition, or the final morphology of the SiO2 layer, which remains unaffected even at 1400°C (the melting point of silicon is 1414°C). Metal-oxide-semiconductor capacitors (MOS-C) and lateral channel metal-oxide-semiconductor field-effect-transistors (MOSFET) were fabricated by use of the high-temperature oxidation process to study 3C-SiC/SiO2 interfaces. Unlike 4H-SiC MOSFET, there is no extra benefit of increasing the oxidation temperature from 1200°C to 1400°C. All the MOSFET resulted in a maximum field-effect mobility of approximately 70 cm2/V s.

Description

Keywords

3C-SiC, Silicon Carbide, MOSFET, high temperature, thermal oxidation

Citation

Sharma, Y. K. , Li, F. , Jennings, M. R. , Fisher, C. A. , Pérez-Tomás, A. , Thomas, S. , Hamilton, D. P. , Russell, S. A. O. , Mawby, P. A. (2015) High-Temperature (1200–1400°C) Dry Oxidation of 3C-SiC on Silicon . Journal of Electronic Materials , 44(11), pp.4167-4174.

Rights

Research Institute

Institute of Engineering Sciences (IES)