A new approach for two-terminal electronic memory devices - Storing information on silicon nanowires
| dc.cclicence | CC-BY | en |
| dc.contributor.author | Paul, Shashi | en |
| dc.contributor.author | Saranti, Konstantina | en |
| dc.contributor.author | Alotaibi, Sultan | en |
| dc.date.acceptance | 2016-05-18 | en |
| dc.date.accessioned | 2016-06-27T15:52:30Z | |
| dc.date.available | 2016-06-27T15:52:30Z | |
| dc.date.issued | 2016-06-09 | |
| dc.description | open access article | |
| dc.description.abstract | The work described in this paper focuses on the utilisation of silicon nanowires as the information storage element in flash-type memory devices. Silicon nanostructures have attracted attention due to interesting electrical and optical properties, and their potential integration into electronic devices. A detailed investigation of the suitability of silicon nanowires as the charge storage medium in two-terminal non-volatile memory devices are presented in this report. The deposition of the silicon nanostructures was carried out at low temperatures (less than 400 °C) using a previously developed a novel method within our research group. Two-terminal non-volatile (2TNV) memory devices and metal-insulator-semiconductor (MIS) structures containing the silicon nanowires were fabricated and an in-depth study of their characteristics was carried out using current-voltage and capacitancetechniques. | en |
| dc.exception.reason | open access article | en |
| dc.funder | EPSRC (Engineering and Physical Sciences Research Council) | en |
| dc.identifier.citation | Paul, S., Saranti, K. and Alotaibi, S. (2016) A new approach for two-terminal electronic memory devices - Storing information on silicon nanowires. Scientific Reports, 6, art. no. 27506 | en |
| dc.identifier.doi | https://doi.org/10.1038/srep27506 | |
| dc.identifier.uri | http://hdl.handle.net/2086/12183 | |
| dc.language.iso | en | en |
| dc.peerreviewed | Yes | en |
| dc.projectid | EP/E047785/1 | en |
| dc.publisher | Nature | en |
| dc.researchgroup | Emerging Technologies Research Centre | en |
| dc.researchinstitute | Institute of Engineering Sciences (IES) | en |
| dc.subject | Two terminal Electronic Memory devices | en |
| dc.subject | Flash Memory | en |
| dc.subject | Silicon nanowires | en |
| dc.subject | PECVD | en |
| dc.title | A new approach for two-terminal electronic memory devices - Storing information on silicon nanowires | en |
| dc.type | Article | en |