On the temperature and carrier density dependence of electron saturation velocity in an AlGaN/GaN HEMT

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dc.contributor.authorOxley, C. H.en
dc.contributor.authorUren, M. J.en
dc.contributor.authorCoates, A.en
dc.contributor.authorHayes, D. G.en
dc.date.accessioned2012-12-13T15:13:42Z
dc.date.available2012-12-13T15:13:42Z
dc.date.issued2006
dc.identifier.citationOxley, C.H., Uren, M., Coates, A. and Hayes, D.G. (2006) On the temperature and carrier density dependence of electron saturation velocity in a AlGaN/GaN HEMT. IEEE Transactions on Electron Devices, 53 (3), pp. 565-568en
dc.identifier.doihttps://doi.org/10.1109/TED.2005.863540
dc.identifier.urihttp://hdl.handle.net/2086/7924
dc.language.isoenen
dc.peerreviewedYesen
dc.publisherIEEEen
dc.researchgroupEmerging Technologies Research Centreen
dc.researchgroupCentre for Electronic and Communications Engineering
dc.titleOn the temperature and carrier density dependence of electron saturation velocity in an AlGaN/GaN HEMTen
dc.typeArticleen

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