Switching in Polymer Memory Devices based on Polymer and Nanoparticles Admixture

Date

2014-10

Advisors

Journal Title

Journal ISSN

ISSN

Volume Title

Publisher

Trans Tech Publications

Type

Conference

Peer reviewed

Yes

Abstract

In this paper, a non-volatile memory device based on a blend of metal oxides (Known as NiO) and polymer has been investigated. These devices have shown to display memory effects; a marked difference in electrical conductivity between the ‘on’ and ‘off’ states. However, the exact mechanism under-pinning these two conductivities states are not very clear. The structures used in investigation are metal-admixture-metal (MAM) and metal-insulator-semiconductor (MIS) devices. Also, glass and p-types silicon (100 orientations) with a pre-prepared Ohmic back contact were used for the MAM and MIS substrates respectively. This work will address some of the questions in regard to the electrical bistability shown by polymer memory devices.

Description

Keywords

Resistive random access memory, Nicke oxide (NiO), Organic Memory, Non-volatile memory

Citation

Alhalafi, Z.H. and Paul, S. (2014) Switching in Polymer Memory Devices based on Polymer and Nanoparticles Admixture. Advances in Science and Technology, 95 (3), pp. 107-112

Rights

Research Institute

Institute of Engineering Sciences (IES)