Non-volatile memory device- using a blend of polymer and ferroelectric nanoparticles.

Date

2008

Advisors

Journal Title

Journal ISSN

ISSN

1454-4164

DOI

Volume Title

Publisher

Type

Article

Peer reviewed

Abstract

In recent years, the interest in the application of organic materials in electronic devices (light emitting diodes, field effect transistors, solar cells), has shown a rapid increase. A new family of organic electronic device is organic memory device. These devices, based on a thin film of nano-sized particles and small molecules embledded in an organic layer attracted considerable attention. This work presents the polymer memory device which is made of a blend of poly(vinyl acetate) and ferroelectric barium titanate nanoparticles. A polymer blend of polyvinyl acetate and barium titanate (BaTiO3) nanoparticles was prepared in methanol and spin coated onto a glass substrate marked with thin Al tracks and top contacts were evaporated onto the blend after drying - this resulted in a metal-organic-metal (MOM) structure. The current-voltage (I-V) behaviour of MOM devices shows that the devices can be switched from a high conductivity state to a low conductivity state, by applying an external electric field - this property can be exploited to store data bits. The working mechanism, in these devices is based on ferroelectric properties of barium titanate.

Description

Keywords

memory devices, switching mechanism

Citation

Paul, S. and Salaoru, I. (2008) Non-volatile memory device- using a blend of polymer and ferroelectric nanoparticles. Journal of optoelectronics and advanced materials, 10 (12) pp. 3461-3464.

Rights

Research Institute

Institute of Engineering Sciences (IES)