The use of nanowires for the production of a power Schottky diode

The reduction in carbon emissions targets of 2050 are challenging and require a number of diverse ways, and probably yet to be invented methods, to reduce the worlds energy consumption. Therefore more energy efficient electrical and electronic devices, and equipment, can play a major role in this. Although their individual contribution is small, due to their mass scale, they should be able to contribute significantly. This research has been aimed at producing such a device, a Schottky diode, which has been constructed in such a manner that it will be more energy efficient than a similar device made the traditional way, using the principle of surface area to volume ratio. The Schottky diode has a characteristic that the current through the device increases with an increase in temperature, in both the forward and reverse biased directions. This leads to the device being less efficient, and energy consumption is increased to no benefit of the circuit it is used in. Two types of devices have been constructed, one from small diameter Si pillars, and the other type from a single large diameter pillar. Both devices are designed to have the same volume of Si, but the devices constructed from the small diameter pillars will have a higher surface area to volume ratio. The devices with the higher surface area to volume ratio will operate at a lower temperature for the same voltage, current and power dissipated. This research has demonstrated that if the devices are made from the pillars, they will have a lower operating temperature, and hence will be a more energy efficient device.