Capacitance-voltage analysis of ZrO2 thin films deposited by thermal MOCVD technique.

Date

2009-10-09

Advisors

Journal Title

Journal ISSN

ISSN

1938-6737
1938-5862

Volume Title

Publisher

The Electrochemical Society

Type

Article

Peer reviewed

Yes

Abstract

The capacitance-voltage (C-V) characteristics of thin films of ZrO2 deposited by thermal metal-organic chemical vapour deposition (MOCVD) have been analyzed. The films were grown at three different temperatures (500, 550 and 600 ºC) and 1 mbar pressure from a novel monomeric zirconium amide-guanidinate complex [Zr(NEtMe)2(guanidinate)2]. The true capacitance was determined from measurements made at different frequencies in order to account for the series and shunt parasitic resistances during C-V measurements. Films grown at 500 and 550 ºC showed no hysteresis while those grown at 600 ºC exhibited a very small hysteresis window 0.16 V for O2 flow of 100 sccm and 0.19 V for 50 sccm O2 flow. A very small voltage shift is also obtained for the device under 10 hr voltage stress. These preliminary in-depth electrical results suggest that quality ZrO2 can be grown from the novel [Zr(NEtMe)2(guanidinate)2] complex precursor paving the way for their use as future gate dielectrics.

Description

Keywords

high-k materials, C-MOS, new precursors, C-V study

Citation

Mih, T.A. (2009) Capacitance-voltage analysis of ZrO2 thin films deposited by thermal MOCVD technique. ECS Transactions, 25 (8), pp. 901-907

Rights

Research Institute

Institute of Engineering Sciences (IES)