A comparison of the performance and stability of ZnO-TFTs with silicon dioxide and nitride as gate insulators.

Simple item page
dc.contributor.authorCross, R. B. M.
dc.contributor.authorDe Souza, M. M.
dc.contributor.authorDeane, S. C.
dc.contributor.authorYoung, N. D.
dc.date.accessioned2010-01-28T09:36:51Z
dc.date.available2010-01-28T09:36:51Z
dc.date.issued2008
dc.identifier.citationCross, R. B. M.; De Souza, M. M.; Deane, S. C.; Young, N. D. (2008) A comparison of the performance and stability of ZnO-TFTs with silicon dioxide and nitride as gate insulators. IEEE Transactions on Electronic Devices, 55 (5), pp. 1109-1115.en
dc.identifier.doihttps://doi.org/10.1109/TED.2008.918662
dc.identifier.issn0018-9383
dc.identifier.urihttp://hdl.handle.net/2086/3253
dc.language.isoenen
dc.peerreviewedYesen
dc.publisherIEEEen
dc.ref2014.selected1366964034_0410680122613_15_4
dc.researchinstituteInstitute of Engineering Sciences (IES)en
dc.titleA comparison of the performance and stability of ZnO-TFTs with silicon dioxide and nitride as gate insulators.en
dc.typeArticleen

Files

License bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
3.27 KB
Format:
Item-specific license agreed upon to submission
Description:
Download

Collections

School of Engineering and Sustainable Development