A comparison of the performance and stability of ZnO-TFTs with silicon dioxide and nitride as gate insulators.

Date

2008

Advisors

Journal Title

Journal ISSN

ISSN

0018-9383

Volume Title

Publisher

IEEE

Type

Article

Peer reviewed

Yes

Abstract

Description

Keywords

Citation

Cross, R. B. M.; De Souza, M. M.; Deane, S. C.; Young, N. D. (2008) A comparison of the performance and stability of ZnO-TFTs with silicon dioxide and nitride as gate insulators. IEEE Transactions on Electronic Devices, 55 (5), pp. 1109-1115.

Rights

Research Institute

Institute of Engineering Sciences (IES)