A comparison of the performance and stability of ZnO-TFTs with silicon dioxide and nitride as gate insulators.
Date
2008
Advisors
Journal Title
Journal ISSN
ISSN
0018-9383
Volume Title
Publisher
IEEE
Type
Article
Peer reviewed
Yes
Abstract
Description
Keywords
Citation
Cross, R. B. M.; De Souza, M. M.; Deane, S. C.; Young, N. D. (2008) A comparison of the performance and stability of ZnO-TFTs with silicon dioxide and nitride as gate insulators. IEEE Transactions on Electronic Devices, 55 (5), pp. 1109-1115.