Electrically air-stable ZnO thin film produced by reactive RF magnetron sputtering for thin film transistors applications.

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dc.contributor.authorNgwashi, Divine K.
dc.contributor.authorCross, R. B. M.
dc.contributor.authorPaul, Shashi
dc.date.accessioned2010-02-03T14:32:25Z
dc.date.available2010-02-03T14:32:25Z
dc.date.issued2009
dc.identifier.citationNgwashi, D. K. Cross, R. B. M. and Paul, S. (2009) Electrically air-stable ZnO thin film produced by reactive RF magnetron sputtering for thin film transistors applications. Materials Research Society Symposium Proceedings, 1201, pp. 153-158.en
dc.identifier.doihttps://doi.org/10.1557/PROC-1201-H05-39
dc.identifier.isbn9781605111742
dc.identifier.issn0272-9172
dc.identifier.urihttp://hdl.handle.net/2086/3332
dc.language.isoenen
dc.peerreviewedYesen
dc.researchgroupEmerging Technologies Research Centreen
dc.researchinstituteInstitute of Engineering Sciences (IES)en
dc.titleElectrically air-stable ZnO thin film produced by reactive RF magnetron sputtering for thin film transistors applications.en
dc.typeConferenceen

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