High-temperature electrical and thermal aging performance and application considerations for SiC power DMOSFETs

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dc.cclicenceCC-BY-NCen
dc.contributor.authorJennings, M.R.
dc.contributor.authorPerez-Tomas, A.
dc.contributor.authorRussell, S.A.O.
dc.contributor.authorHindmarsh, S.A.
dc.contributor.authorFisher, C.A.
dc.contributor.authorMawby, P.A.
dc.contributor.authorHamilton, Dean P.
dc.date.acceptance2016-11-23
dc.date.accessioned2019-11-26T16:02:05Z
dc.date.available2019-11-26T16:02:05Z
dc.date.issued2016-12-07
dc.descriptionThe author's final peer reviewed version can be found by following the URI link. The Publisher's final version can be found by following the DOI link.en
dc.description.abstractThe temperature dependence and stability of three different commercially-available unpackaged SiC Dmosfets have been measured. On-state resistances increased to 6 or 7 times their room temperature values at 350 °C. Threshold voltages almost doubled after tens of minutes of positive gate voltage stressing at 300 °C, but approached their original values again after only one or two minutes of negative gate bias stressing. Fortunately, the change in drain current due to these threshold instabilities was almost negligible. However, the threshold approaches zero volts at high temperatures after a high temperature negative gate bias stress. The zero gate bias leakage is low until the threshold voltage reduces to approximately 150 mV, where-after the leakage increases exponentially. Thermal aging tests demonstrated a sudden change from linear to nonlinear output characteristics after 24-100 h air storage at 300 °C and after 570-1000 h in N2 atmosphere. We attribute this to nickel oxide growth on the drain contact metallization which forms a heterojunction p-n diode with the SiC substrate. It was determined that these state-of-the-art SiC mosfet devices may be operated in real applications at temperatures far exceeding their rated operating temperatures.en
dc.exception.reasonavailable from Warwick Uni repositoryen
dc.exception.ref2021codes254aen
dc.funderNo external funderen
dc.identifier.citationHamilton, D.P., Jennings, M.R., Perez-Tomas, A., Russell, S.A.O., Hindmarsh, S.A., Fisher, C.A., Mawby, P.A. (2017) High-Temperature Electrical and Thermal Aging Performance and Application Considerations for SiC Power DMOSFETs, IEEE Transactions on Power Electronics, 32(10), pp. 7967-7979.en
dc.identifier.doihttps://doi.org/10.1109/tpel.2016.2636743
dc.identifier.issn0885-8993
dc.identifier.issn1941-0107
dc.identifier.urihttp://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7776925&isnumber=7924296
dc.identifier.urihttp://wrap.warwick.ac.uk/84556/
dc.identifier.urihttps://dora.dmu.ac.uk/handle/2086/18876
dc.language.isoenen
dc.peerreviewedYesen
dc.publisherIEEEen
dc.researchinstituteInstitute of Energy and Sustainable Development (IESD)en
dc.subjectThermal ageingen
dc.subjectSiCen
dc.subjectSilicon Carbideen
dc.subjectMOSFETen
dc.subjectthermal performanceen
dc.subjectpower DMOSFETen
dc.subjectgate voltage stressingen
dc.subjectnegative gate bias stressen
dc.subjectdrain contacten
dc.subjectmetallizationen
dc.subjectohmic contacten
dc.titleHigh-temperature electrical and thermal aging performance and application considerations for SiC power DMOSFETsen
dc.typeArticleen

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