Experimental study of mobility degradation in ultrathin high-κ based MOSFETs.

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dc.contributor.authorAtarah, S. A.
dc.date.accessioned2010-10-19T14:49:08Z
dc.date.available2010-10-19T14:49:08Z
dc.date.issued2010
dc.identifier.citationAtarah, S.A. (2010) Experimental study of mobility degradation in ultrathin high-κ based MOSFETs. Solid State Electronics, 55 (1), pp. 44-48en
dc.identifier.doihttps://doi.org/10.1016/j.sse.2010.09.004
dc.identifier.issn0038-1101
dc.identifier.urihttp://hdl.handle.net/2086/4230
dc.language.isoenen
dc.peerreviewedYesen
dc.publisherIEEEen
dc.researchgroupEmerging Technologies Research Centreen
dc.titleExperimental study of mobility degradation in ultrathin high-κ based MOSFETs.en
dc.typeArticleen

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