Improved performance of 4h-sic pin diodes using a novel combined high temperature oxidation and annealing process


In this paper, the application of a novel combined high temperature thermal oxidation and annealing process to mesa-isolated epitaxial-anode 4H-SiC PiN diodes with thick (110 μm) drift regions is presented, the aim of which was to increase the carrier lifetime in the 4H-SiC. Diodes were fabricated using 4H-SiC material having undergone this process, which consisted of a thermal oxidation in dry pure O 2 at 1550°C followed by an argon anneal at the same temperature. Forward current-voltage characterization showed that the oxidised/annealed samples typically showed around 15% lower forward voltage drop and around 40% lower differential on-resistance (at 100 A/cm 2 and 25°C) compared to control sample PiN diodes, whilst reverse recovery tests indicated a carrier lifetime increase also of around 40%. These findings illustrate that the use of this process is a highly effective and efficient way of improving the electrical characteristics of high voltage 4H-SiC bipolar devices.


The Publisher's final version can be found by following the DOI link.


PIN photodiodes, Oxidation, Annealing, Charge carrier lifetime, Anodes, Temperature measurement, Materials


Fisher, C.A., Jennings, M.R., Sharma, Y.K., Hamilton, D.P., Gammon, P.M., Perez-Tomas, A.,Thomas, S.M., Burrows, S.E., Mawby, P.A. (2014) Improved Performance of 4H-SiC PiN Diodes Using a Novel Combined High Temperature Oxidation and Annealing Process. IEEE Transactions on Semiconductor Manufacturing, 27(3), pp. 443-451.


Research Institute

Institute of Engineering Sciences (IES)