Connector-less SiC power modules with integrated shunt—Low-profile design for low inductance and low cost

This paper presents the design, manufacture and characterization of connector-less 1200 V SiC MOSFET half-bridge power modules based on AlN DCB substrate. The modules contain four MOSFETs and no external antiparallel diodes. They are rated for a current of 40 A and include a shunt. Static and dynamic measurement results are presented. Multiphysics simulations are used to validate the measured data. The modules show a power path inductance below 3 nH. The power rating of the implemented chip shunt resistors is sufficient for the performed characterizations but requires revision. The switching loss at turn-on is 340 μJ at 23 A, 800 V, the turn-off loss is well below 50 μJ, principally allowing MHz operation in resonant mode.