Optimising the low temperature growth of uniform ZnO nanowires.
Zinc oxide (ZnO) nanowires have been widely investigated and various different methods of their synthesis have been suggested. This work is devoted to the optimisation of the growth conditions for uniform and evenly distributed ZnO nanowire arrays. The nanowire growth process includes two steps: 1. Radio-frequency (RF) magnetron sputtering of a ZnO nucleation layer onto a substrate; 2. A hydrothermal growth step of ZnO nanowires using the aforementioned sputtered layer as a template. The optimisation process was divided into two sets of experiments: (i) the deposition of different thicknesses of the ZnO nucleation layer and the subsequent nanowire growth step (using the same conditions) for each thickness. The results revealed a strong dependence of the nanowire size upon the seed layer thickness and structural properties; (ii) the second set of experiments were based on growth solution temperature variation for the nucleation layers of the same thicknesses. This also showed nanowire size and distribution change with solution temperature variation.
Citation : Gabrielyan, N., Paul, S. and Cross, R.B.M. (2010) Optimising the low temperature growth of uniform ZnO nanowires. Materials Research Society Symposium Proceedings, 1201 pp. 295-300
ISBN : 978-160511174-2
ISSN : 02729172
Research Group : Emerging Technologies Research Centre
Research Institute : Institute of Engineering Sciences (IES)
Peer Reviewed : Yes