Low-inductive compact SiC power modules for high-frequency operation
This paper encompasses the design, manufacture and electrical characterisation of full-SiC half-bridge modules suited for high-frequency operation. The modules consist of stacked AlN DCB substrates equipped with SiC MOSFETs and SiC JFETs. The parasitic inductances of the modules were minimised by the use of a press contact system instead of contact leads. The low parasitic inductances of the modules were verified by simulation and impedance spectroscopy. Modules with different configurations are compared regarding their current- and temperature-dependent static losses by means of a temperature-controlled test rig. The measured low on-resistance of the individual switches proves the high performance of the modules predicted by thermal simulations.
Citation : Meisser, M., Hamilton, D.P., Blank, T., Mawby, P.A. (2014) Low-inductive compact SiC power modules for high-frequency operation. PCIM Europe 2014; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany, May 2014.
ISBN : 9783800736034