Now showing items 31-36 of 36
Measurement of unity gain cutoff frequency and saturation velocity of a GaN HEMT transistor
The measured intrinsic saturation velocity (vsi) of carriers in a gallium nitride (GaN) high electron mobility transistor (HEMT) is very much lower than that predicted using Monte Carlo simulation. A novel method of ...
Some new thoughts on Gauss-Laguerre quadrature
(Taylor & Francis, 2005-06-01)
Design of flexible manpower line walk cycles for a fixed number of operators.
(Taylor & Francis, 2005-01-01)
Flexible manpower lines (FMLs) are a form of flow process line in which operators are allocated 'walk cycles', i.e. a repetitive sequence in which to load and unload machine tools. The effective design of such lines is ...
Organic memory devices using C 60 and insulating polymer
(Materials Research Society, 2005)
In this paper, we describe an all organic molecular memory device that combines the advantages of molecular and organic electronics. We accomplish this by combining C 60 molecules with poly(4-vinylphenol) (PVP) and ...
GaN HFT development at QinetiQ’