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dc.contributor.authorPaul, Shashi
dc.contributor.authorGabrielyan, Nare
dc.contributor.authorAlotaibi, Sattam
dc.date.accessioned2014-11-13T09:15:40Z
dc.date.available2014-11-13T09:15:40Z
dc.date.issued2014-10
dc.identifier.urihttp://hdl.handle.net/2086/10476
dc.description.abstractThis work illustrates a novel device for storing electronic charge and works as a nonvolatile memory device. It is fabricated using an industrial technique and consists of silicon nanostructures and diamond like carbon (DLC) as a memory element and an ultra-thin barrier layer respectively. Both the silicon nanostructures and the DLC have been deposited by plasma enhanced chemical vapour deposition (PECVD) technique. The nanostructures are sandwiched between two DLC layers. To understand the ability of silicon nanostructures to store electronic charge currentvoltage (I-V) and current-time (I-t) measurements were carried out. The memory effect is noted as the difference between the two electrical conductivity states (low ‘‘0’’ and high ‘‘1’’).en
dc.publisherTrans Tech Publications, Switzerlanden
dc.subjectNon-volatile memory
dc.subjecttwo terminal memories
dc.subjectdiamond like carbon
dc.subjectsilicon nanostructures
dc.titleTwo Terminal Non-volatile Memory Devices using Diamond-like Carbon and Silicon Nanostructuresen
dc.typeConferenceen
dc.identifier.doihttp://dx.doi.org/10.4028/www.scientific.net/AST.95.100
dc.researchgroupEmerging Technologies Research Centreen
dc.peerreviewedYesen
dc.explorer.multimediaYesen
dc.fundernoneen
dc.projectidnoneen
dc.researchinstituteInstitute of Engineering Sciences (IES)en


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