School of Engineering and Sustainable Development

Permanent URI for this collection

https://hdl.handle.net/2086/1696

Browse

Browsing School of Engineering and Sustainable Development by Subject "3C-SiC"

Now showing 1 - 1 of 1
  • No Thumbnail Available
    ItemMetadata only
    High-Temperature (1200–1400°C) Dry Oxidation of 3C-SiC on Silicon
    (Springer, 2015-08-07) Sharma, Y.K.; Li, F.; Jennings, M.R.; Fisher, C.A.; Perez-Tomas, A.; Thomas, S.; Hamilton, Dean P.; Russell, S.A.O.; Mawby, P.A.
    In a novel approach, high temperatures (1200–1400°C) were used to oxidize cubic silicon carbide (3C-SiC) grown on silicon substrate. High-temperature oxidation does not significantly affect 3C-SiC doping concentration, 3C-SiC structural composition, or the final morphology of the SiO2 layer, which remains unaffected even at 1400°C (the melting point of silicon is 1414°C). Metal-oxide-semiconductor capacitors (MOS-C) and lateral channel metal-oxide-semiconductor field-effect-transistors (MOSFET) were fabricated by use of the high-temperature oxidation process to study 3C-SiC/SiO2 interfaces. Unlike 4H-SiC MOSFET, there is no extra benefit of increasing the oxidation temperature from 1200°C to 1400°C. All the MOSFET resulted in a maximum field-effect mobility of approximately 70 cm2/V s.