Browsing by Author "Xu, H."

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    Human DNA replication initiation factors, ORC and MCM, associate with oriP of Epstein-Barr virus.
    (National Academy of Sciences, 2001) Chaudhuri, B.; Xu, H.; Todorov, I.; Dutta, A.; Yates, John L.
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    Origin of Stochastic Resistive Switching in Devices with Phenomenologically
    (IEEE, 2014) Li, Qingjiang; Khiat, Ali; Salaoru, Iulia; Xu, H.; Prodromakis, Themistoklis
    Nanoscale resistive switching devices are nowadays widely employed in applications of storage, logic and computing. The switching mechanism of metal oxide based devices is normally assumed to be the filamentary formation and rupture within the devices’ active cores but the origin of filaments growth is still controversial. Previous research has already demonstrated that initial filamentary states could significantly affect the devices’ switching dynamics and final resistance distributions. Here we demonstrate the relation between pristine resistive states and distribution of filaments via modeling the switching dynamics by utilizing a current percolation circuit. We show that devices with identical initial resistive states could attain distinct plausible filamentary distributions and correspondingly manifest very dissimilar switching dynamics even when biased with similar stimuli.
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    Stochastic switching of TiO2 based memristive devices with identical initial memory states
    (Springer, 2014-05-17) Li, Qingjiang; Khiat, Ali; Salaoru, Iulia; Xu, H.; Prodromakis, Themistoklis
    In this work, we show that identical TiO2-based memristive devices that possess the same initial resistive states are only phenomenologically similar as their internal structures may vary significantly, which could render quite dissimilar switching dynamics. We experimentally demonstrated that the resistive switching of practical devices with similar initial states could occur at different programming stimuli cycles. We argue that similar memory states can be transcribed via numerous distinct active core states through the dissimilar reduced TiO2-x filamentary distributions. Our hypothesis was finally verified via simulated results of the memory state evolution, by taking into account dissimilar initial filamentary distribution.