Browsing by Author "Uren, M. J."
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Item Metadata only Gallium Nitride Technology now and in 3 Decades(2002-03) Oxley, C. H.; Uren, M. J.; Hayes, D.Item Metadata only GaN HFT development at QinetiQ’(2005-09) Martin, T.; Soley, D.; Oxley, C. H.; McGovern, P.; Tasker, P.J.; Uren, M. J.; Balmer, R. S.; Wallis, D.; Hilton, K. P.; Maclean, J. O.; Munday, A. G; Hydes, A. J.; Hayes, D. G.Item Metadata only Measurement of unity gain cutoff frequency and saturation velocity of a GaN HEMT transistor(IEEE, 2005-02-01) Oxley, C. H.; Uren, M. J.The measured intrinsic saturation velocity (vsi) of carriers in a gallium nitride (GaN) high electron mobility transistor (HEMT) is very much lower than that predicted using Monte Carlo simulation. A novel method of extraction of the intrinsic saturation velocity (vsi) of carriers has been developed utilising the deembedded s-parameters, thus enabling the calculation of vsi over a wide range of bias conditions. The method is equally applicable for gallium arsenide (GaAs) and indium phosphide (InP) based transistors. The measurements indicate for GaN-based HEMT a maximum deembedded saturation velocity of 1.1×105 m/s close to the pinchoff voltage (VP). It was found that self-heating had only a weak effect on the saturation velocity up to junction temperatures approaching 140°C above ambient.Item Metadata only On the temperature and carrier density dependence of electron saturation velocity in an AlGaN/GaN HEMT(IEEE, 2006) Oxley, C. H.; Uren, M. J.; Coates, A.; Hayes, D. G.Item Metadata only The performance of gallium nitride transistors with a view to broad-band wireless communications(2002-11) Oxley, C. H.; Uren, M. J.