Browsing by Author "Ngwashi, Divine K."

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    Electrical Performance and Stability of ZnO Thin-Film Transistors Incorporating Gadolinium Oxide High-k Dielectrics
    (Science Publishing Group, 2019-01-10) Ngwashi, Divine K.; Paul, Shashi; Devi, Anjana; Cross, R. B. M.
    This work investigates the performance and gate bias stress instability of ZnO-based thin film transistors (ZnO-TFTs) incorporating amorphous gadolinium oxide, a high-k dielectric material. ZnO thin films produced via radio frequency (RF) reactive magnetron sputtering were used as channel layers. The source/drain electrodes were achieved by the thermal evaporation of aluminium on a bottom gate inverted staggered ZnO TFT structure. Gadolinium oxide (Gd2O3) deposited by metal-organic chemical vapour deposition (MOCVD) served as the gate dielectric. The electrical characterisation of the ZnO-TFTs produced showed improvement in performance and stability in comparison to thermally-grown SiO2-based ZnO TFTs fabricated under the same conditions. The effective channel mobility, on-off current ratio and subthreshold swing of the TFTs incorporating Gd2O3 dielectric were found to be 33.5 cm2 V-1s-1, 107, and 2.4 V/dec respectively when produced. The electrical characterisation of the same devices produced with SiO2 dielectrics exhibited effective mobility, on-off current ratio and subthreshold swing of 7.0 cm2 V-1s-1, 106 and 1.4 V/dec respectively. It is worth noting that, the ZnO active layer was sputtered under room temperature with no intentional heating and post-deposition annealing treatment. On application of gate bias stressing on these thin film transistors, it was observed that threshold voltage instability increased with stress period in all device types. Transistors incorporating Gd2O3 however, were found to exhibit lesser threshold voltage related instability with regards to gate bias stressing in comparison to similar devices incorporating SiO2 as gate dielectric. It was also observed that the effective mobility in both devices tend to stabilize with prolonged gate bias application. In this work, it is demonstrated that Gd2O3 dielectric is a potential alternative to SiO2 for the fabrication of ZnO TFTs with improved performance and electrical stability under prolonged use.
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    High mobility ZnO thin film transistors using the novel deposition of high-k dielectrics.
    (Cambridge University Press, 2012) Ngwashi, Divine K.; Cross, R. B. M.; Paul, Shashi; Milanov, Andrian P.; Devi, Anjana
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    Lanthanide oxide thin films by metalorganic chemical vapor deposition employing volatile guanidinate precursors.
    (2009-11-24) Paul, Shashi; Milanov, Andrian P.; Toader, Teodor; Parala, Harish; Barreca, Davide; Gasparotto, Alberto; Bock, Claudia; Becker, Hans-Werner; Ngwashi, Divine K.; Cross, R. B. M.; Kunze, Ulrich; Fischer, Roland A.; Devi, Anjana
    The application of two novel metalorganic complexes, namely the isostructural tris(N,N'diisopropyl-2-dimethlyamido-guanidinato)gadolinium(III) (1) and tris(N,N'-diisopropyl-2-dimethlyamido-guanidinato)dysprosium(III) (2) as precursors for metalorganic chemical vapor deposition (MOCVD) of Gd 2O3 and Dy2O3 is discussed. On the basis of the detailed thermal gravimetric analysis (TGA) and isothermal TGA studies, both the precursors are very volatile and able to deliver continuous mass transport into the gas phase. The extraordinary thermal stability of the precursors was revealed by nulcear magnetic resonance (NMR) decomposition studies. Depositions were carried out in the presence of oxygen at reduced pressure and varying the substrate temperature in the range 300-700 °C. Uniform films with reproducible quality were deposited on Si(100) and Al 2O3(000l) substrates over the entire temperature range. Employing a multitechnique approach (XRD, SEM, AFM, EDX, XPS, RBS, SNMS, C- V), variations of the growth characteristics and film properties with deposition temperature are studied in terms of crystallinity, structure, surface roughness, composition, and electrical properties.
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    Rare-Earth based Oxide and Nitride thin films employing volatile homoleptic guanidinate precursors.
    (The Electrochemical Society, 2009-10-09) Milanov, Andrian P.; Thiede, Tobias; Hellwig, Malte; Parala, Harish; Bock, Claudia; Becker, Hans-Werner; Ngwashi, Divine K.; Cross, R. B. M.; Paul, Shashi; Ukunze, Ulrich; Fischer, Roland A.; Devi, Anjana
    The application of the metalorganic compound tris(N,N'-diisopropyl-2-dimethlyamidoguanidinato)gadolinium(III) (1) as a precursor for MOCVD of Gd2O3 is discussed. Depositions were carried out in the presence of oxygen at reduced pressure and varying the substrate temperature in the range 300 - 700{degree sign}C. Employing a multi-technique approach (XRD, SEM, AFM, EDX, RBS, SNMS, SE, C-V), variations of the growth characteristics and film properties with deposition temperature are studied in terms of crystallinity, structure, surface roughness, composition, optical and electrical properties. In addition, the use of 1 as single source precursor for the MOCVD of GdN thin films is also demonstrated.