Browsing by Author "Hui, Xu"

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    Correlated Resistive/Capacitive State Variability in Solid TiO2 based Memory Devices
    (Springer, 2017-04-25) Li., Qingjiang; Salaoru, Iulia; Ali, Khiat; Prodromakis, Themistoklis; Hui, Xu
    In this work, we experimentally demonstrated the correlated resistive/capacitive switching and state variability in practical TiO2 based memory devices. Based on filamentary functional mechanism, we argue that the impedance state variability stems from the randomly distributed defects inside the oxide bulk. Finally, our assumption was verified via a current percolation circuit model, by taking into account of random defects distribution and coexistence of memristor and memcapacitor.
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    Memory Impedance in TiO2 based Metal-Insulator-Metal Devices
    (Nature, 2014-03-31) Qingjiang, Li; Khiat, Ali; Salaoru, Iulia; Papavassiliou, Christos; Hui, Xu; Prodromakis, Themistoklis
    Large attention has recently been given to a novel technology named memristor, for having the potential of becoming the new electronic device standard. Yet, its manifestation as the fourth missing element is rather controversial among scientists. Here we demonstrate that TiO2-based metal-insulator-metal devices are more than just a memory-resistor. They possess resistive, capacitive and inductive components that can concurrently be programmed; essentially exhibiting a convolution of memristive, memcapacitive and meminductive effects. We show how non-zero crossing current-voltage hysteresis loops can appear and we experimentally demonstrate their frequency response as memcapacitive and meminductive effects become dominant.