Coexistence of memory resistance and memory capacitance in TiO2 solid state devices

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dc.cclicenceCC-BYen
dc.contributor.authorSalaoru, Iuliaen
dc.contributor.authorLi, Qingjiangen
dc.contributor.authorKhiat, Alien
dc.contributor.authorProdromakis, Themistoklisen
dc.date.acceptance2014-09-23en
dc.date.accessioned2016-07-15T09:49:37Z
dc.date.available2016-07-15T09:49:37Z
dc.date.issued2014-09-23
dc.description.abstractThis work exploits the coexistence of both resistance and capacitance memory effects in TiO2-based two-terminal cells. Our Pt/TiO2/TiOx/Pt devices exhibit an interesting combination of hysteresis and non-zero crossing in their current-voltage (I-V) characteristic that indicates the presence of capacitive states. Our experimental results demonstrate that both resistance and capacitance states can be simultaneously set via either voltage cycling and/or voltage pulses. We argue that these state modulations occur due to bias-induced reduction of the TiOx active layer via the displacement of ionic species.en
dc.funderEPSRC (Engineering and Physical Sciences Research Council)en
dc.funderNational Nature Scienceen
dc.funderCHIST-ERA ERA-Neten
dc.identifier.citationSalaoru, I., Li, Q., Khiat, A. and Prodromakis, T. (2014) Coexistence of memory resistance and memory capacitance in TiO2 solid state devices. Nanoscale Research Letters, 9, pp. 552en
dc.identifier.doihttps://doi.org/10.1186/1556-276X-9-552
dc.identifier.urihttp://hdl.handle.net/2086/12308
dc.language.isoenen
dc.peerreviewedYesen
dc.projectidEP/J00801X/1en
dc.projectidEP/K017829/1en
dc.projectid61171017en
dc.publisherSpringeren
dc.researchinstituteInstitute of Engineering Sciences (IES)en
dc.subjectReRAMen
dc.subjectMemristoren
dc.subjectMemcapacitoren
dc.subjectTiO2en
dc.subjectNanoscaleen
dc.titleCoexistence of memory resistance and memory capacitance in TiO2 solid state devicesen
dc.typeArticleen

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