Two Terminal Non-volatile Memory Devices using Diamond-like Carbon and Silicon Nanostructures

Date

2014-10

Advisors

Journal Title

Journal ISSN

ISSN

Volume Title

Publisher

Trans Tech Publications, Switzerland

Type

Conference

Peer reviewed

Yes

Abstract

This work illustrates a novel device for storing electronic charge and works as a nonvolatile memory device. It is fabricated using an industrial technique and consists of silicon nanostructures and diamond like carbon (DLC) as a memory element and an ultra-thin barrier layer respectively. Both the silicon nanostructures and the DLC have been deposited by plasma enhanced chemical vapour deposition (PECVD) technique. The nanostructures are sandwiched between two DLC layers. To understand the ability of silicon nanostructures to store electronic charge currentvoltage (I-V) and current-time (I-t) measurements were carried out. The memory effect is noted as the difference between the two electrical conductivity states (low ‘‘0’’ and high ‘‘1’’).

Description

Keywords

Non-volatile memory, two terminal memories, diamond like carbon, silicon nanostructures

Citation

Alotaibi, S., Gabrielyan, N. & Paul, S., (2014). Two Terminal Non-Volatile Memory Devices Using Diamond-Like Carbon and Silicon Nanostructures. 6th Forum on New Materials - Part C.

Rights

Research Institute

Institute of Engineering Sciences (IES)